• DocumentCode
    1530086
  • Title

    High-Responsivity Solar-Blind Photodetector Based on  \\hbox {Mg}_{0.46}\\hbox {Zn}_{0.54}\\hbox {O} Thin Film

  • Author

    Zheng, Qinghong ; Huang, Feng ; Huang, Jin ; Hu, Qichan ; Chen, Dagui ; Ding, Kai

  • Author_Institution
    Key Lab. of Optoelectron. Mater. Chem. & Phys., Fujian Inst. of Res. on the Struct. of Matter, Fuzhou, China
  • Volume
    33
  • Issue
    7
  • fYear
    2012
  • fDate
    7/1/2012 12:00:00 AM
  • Firstpage
    1033
  • Lastpage
    1035
  • Abstract
    Adopting relatively high substrate temperature and low growth rate, single-phase wurtzite Mg0.46Zn0.54O film is grown on a quartz substrate by homemade magnetron sputtering. Solar-blind photodetector is fabricated based on the MgZnO film and shows a peak responsivity of 3.4 A/W at 265 nm with a cutoff wavelength of 280 nm under 10 V. As applied voltage increased to 70 V, the peak responsivity is up to 31.1 A/W corresponding to an internal gain of 148 times. The large internal gain was attributed to the trapping of photoionized holes at Ev + 282 meV deep level through deep-level transient spectral measurement.
  • Keywords
    magnesium compounds; photodetectors; quartz; sputtering; thin film devices; zinc compounds; Mg0.46Zn0.54O; deep-level transient spectral measurement; electron volt energy 282 meV; high-responsivity solar-blind photodetector; homemade magnetron sputtering; low growth rate; photoionized holes; quartz substrate; relatively high substrate temperature; single-phase wurtzite thin film; voltage 10 V; voltage 70 V; wavelength 280 nm; Charge carrier processes; Gain measurement; Photodetectors; Sputtering; Substrates; Zinc oxide; Metal–semiconductor–metal (MSM); MgZnO; photoconductive gain; solar-blind photodetector (SBPD);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2196675
  • Filename
    6210357