Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer

Author

Liu, Chao ; Lu, Taiping ; Wu, Lejuan ; Wang, Hailong ; Yin, Yian ; Xiao, Guowei ; Zhou, Yugang ; Li, Shuti

Author_Institution

Inst. of the Opto-Electron. Mater. & Technol., South China Normal Univ., Guangzhou, China

Volume

24

Issue

14

fYear

2012

fDate

7/15/2012 12:00:00 AM

Firstpage

1239

Lastpage

1241

Abstract

An InGaN/GaN superlattice (SL) with Mg-doped barriers was designed and inserted into the InGaN-based blue light-emitting diodes (LEDs) as a hole gathering layer (HGL) to promote hole injection into the active region. The fabricated LEDs with the SL HGL show 36.4% increase in light output power at an injection current of 200 mA. Meanwhile, the efficiency droop is also mitigated effectively, as compared to the traditional LEDs. The improved performance is attributed to increased hole injection efficiency and decreased electron leakage into the p-type region.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; magnesium; superlattices; wide band gap semiconductors; InGaN-GaN; LED; blue light-emitting diodes; current 200 mA; hole gathering layer; hole injection; superlattice; Charge carrier processes; Gallium nitride; Light emitting diodes; Power generation; Quantum well devices; Radiative recombination; Superlattices; Hole gathering layer; InGaN/GaN superlattice (SL); light-emitting diodes (LEDs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2202104

Filename

6210361