Title :
CMOS-Compatible Generation of Self-Organized 3-D Ge Quantum Dot Array for Photonic and Thermoelectric Applications
Author :
Wang, Ching-Chi ; Chen, Kuan-Hung ; Chen, Inn-Hao ; Lai, Wei-Ting ; Chang, Hung-Tai ; Chen, Wen-Yen ; Hsu, Jung-Chao ; Lee, Shen-Wei ; Hsu, Tzu-Min ; Hung, Ming-Tsung ; Li, Pei-Wen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan
fDate :
7/1/2012 12:00:00 AM
Abstract :
We demonstrate a CMOS-compatible scheme, selective oxidation of SiGe pillars, for creating well-organized 3-D Ge quantum dot (QD) array by guiding QDs migration along the oxidation path and thus placing them on targeted locations where the ultimate oxidation occurs. Stacked QDs exhibit tunable luminescence over the visible and possess low thermal conductivity, showing promise for nanophotonic and energy conversion devices.
Keywords :
elemental semiconductors; germanium; luminescence; nanofabrication; nanophotonics; nanostructured materials; oxidation; self-assembly; semiconductor growth; semiconductor quantum dots; thermal conductivity; thermoelectric devices; CMOS-compatible generation; CMOS-compatible scheme; Ge; SiGe pillars; energy conversion device; nanophotonic device; oxidation path; photonic application; quantum dot migration; selective oxidation; self-organized 3D Ge quantum dot array; stacked quantum dots; thermal conductivity; thermoelectric application; tunable luminescence; ultimate oxidation; Arrays; Conductivity; Oxidation; Quantum dots; Silicon; Silicon germanium; Three dimensional displays; Ge quantum dot (QD); photonics; thermoelectrics (TE);
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2012.2202124
