CMOS-Compatible Generation of Self-Organized 3-D Ge Quantum Dot Array for Photonic and Thermoelectric Applications

Author

Wang, Ching-Chi ; Chen, Kuan-Hung ; Chen, Inn-Hao ; Lai, Wei-Ting ; Chang, Hung-Tai ; Chen, Wen-Yen ; Hsu, Jung-Chao ; Lee, Shen-Wei ; Hsu, Tzu-Min ; Hung, Ming-Tsung ; Li, Pei-Wen

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan

Volume

11

Issue

4

fYear

2012

fDate

7/1/2012 12:00:00 AM

Firstpage

657

Lastpage

660

Abstract

We demonstrate a CMOS-compatible scheme, selective oxidation of SiGe pillars, for creating well-organized 3-D Ge quantum dot (QD) array by guiding QDs migration along the oxidation path and thus placing them on targeted locations where the ultimate oxidation occurs. Stacked QDs exhibit tunable luminescence over the visible and possess low thermal conductivity, showing promise for nanophotonic and energy conversion devices.

Keywords

elemental semiconductors; germanium; luminescence; nanofabrication; nanophotonics; nanostructured materials; oxidation; self-assembly; semiconductor growth; semiconductor quantum dots; thermal conductivity; thermoelectric devices; CMOS-compatible generation; CMOS-compatible scheme; Ge; SiGe pillars; energy conversion device; nanophotonic device; oxidation path; photonic application; quantum dot migration; selective oxidation; self-organized 3D Ge quantum dot array; stacked quantum dots; thermal conductivity; thermoelectric application; tunable luminescence; ultimate oxidation; Arrays; Conductivity; Oxidation; Quantum dots; Silicon; Silicon germanium; Three dimensional displays; Ge quantum dot (QD); photonics; thermoelectrics (TE);

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2012.2202124

Filename

6210389