Imaging front-end for thermal detection using an InP DHBT process

Author

Vassilev, Vessen ; Zirath, Herbert ; Karandikar, Yogesh

Author_Institution

Dept. of Microtechnol. & Ninoscience - MC2, Chalmers Univ. of Technol., Gothenburg, Sweden

fYear

2014

fDate

14-19 Sept. 2014

Firstpage

1

Lastpage

3

Abstract

This paper presents a 153-162 GHz pre-amplified power detector receiver based on a 250 nm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) process. The front end consists of a double slot antenna followed by a five stage low noise amplifier and a detector. The receiver is characterized through measurements of its response to broadband hot and cold terminations. A simplified method is presented for calculation of the temperature resolution of the receiver from measurements of the detected DC voltage and the noise spectrum at the video output of the receiver. The calculated temperature resolution for the receiver is 2.7 K at 1 ms integration time. This work addresses the need for low cost compact solutions suitable for multi pixel thermal imaging systems.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; infrared imaging; low noise amplifiers; millimetre wave bipolar transistors; slot antennas; DHBT; InP-InGaAs-InP; InP-InGaAs-InP double heterojunction bipolar transistor; detected DC voltage; double slot antenna; frequency 153 GHz to 162 GHz; imaging front-end; low noise amplifier; multipixel thermal imaging systems; noise spectrum; pre-amplified power detector receiver; size 250 nm; temperature 2.7 K; temperature resolution; thermal detection; time 1 ms; video output; Antennas; Detectors; Imaging; Noise; Noise measurement; Temperature measurement; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on

Conference_Location

Tucson, AZ

Type

conf

DOI

10.1109/IRMMW-THz.2014.6956217

Filename

6956217