Title :
Interfacial polarisation on gallium arsenide membranes
Author :
Prodromakis, Themistoklis ; Konstantinidis, G. ; Papavassiliou, Christos ; Toumazou, Christofer
Author_Institution :
Inst. of Biomed. Eng., Imperial Coll. London, London, UK
fDate :
6/1/2010 12:00:00 AM
Abstract :
An investigation on the dielectric properties of gallium arsenide membranes is presented. Particularly, the authors exploit the interfacial polarisation effect of microstrip and coplanar transmission lines on multilayered membrane structures. Such structures are in favour with the Maxwell-Wagner polarisation, which can be used for resembling the dielectric characteristics of high-k materials. The authors demonstrate a technique for attaining large slowing factors while the corresponding dielectric losses are significantly reduced.
Keywords :
III-V semiconductors; coplanar transmission lines; dielectric depolarisation; dielectric losses; gallium arsenide; high-k dielectric thin films; membranes; microstrip lines; GaAs; Maxwell-Wagner polarisation; coplanar transmission lines; dielectric losses; gallium arsenide membranes; high-K dielectric materials; interfacial polarisation; microstrip transmission lines; multilayered membrane structures;
Journal_Title :
Micro & Nano Letters, IET
DOI :
10.1049/mnl.2010.0008
