DocumentCode
1530488
Title
Interfacial polarisation on gallium arsenide membranes
Author
Prodromakis, Themistoklis ; Konstantinidis, G. ; Papavassiliou, Christos ; Toumazou, Christofer
Author_Institution
Inst. of Biomed. Eng., Imperial Coll. London, London, UK
Volume
5
Issue
3
fYear
2010
fDate
6/1/2010 12:00:00 AM
Firstpage
178
Lastpage
180
Abstract
An investigation on the dielectric properties of gallium arsenide membranes is presented. Particularly, the authors exploit the interfacial polarisation effect of microstrip and coplanar transmission lines on multilayered membrane structures. Such structures are in favour with the Maxwell-Wagner polarisation, which can be used for resembling the dielectric characteristics of high-k materials. The authors demonstrate a technique for attaining large slowing factors while the corresponding dielectric losses are significantly reduced.
Keywords
III-V semiconductors; coplanar transmission lines; dielectric depolarisation; dielectric losses; gallium arsenide; high-k dielectric thin films; membranes; microstrip lines; GaAs; Maxwell-Wagner polarisation; coplanar transmission lines; dielectric losses; gallium arsenide membranes; high-K dielectric materials; interfacial polarisation; microstrip transmission lines; multilayered membrane structures;
fLanguage
English
Journal_Title
Micro & Nano Letters, IET
Publisher
iet
ISSN
1750-0443
Type
jour
DOI
10.1049/mnl.2010.0008
Filename
5504875
Link To Document