Title :
Theoretical analysis and FDTD simulation of GaAs nonlinear transmission lines
Author :
Wang, Xudong ; Hwu, R. Jennifer
Author_Institution :
Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA
fDate :
7/1/1999 12:00:00 AM
Abstract :
The GaAs nonlinear transmission line (NLTL), a monolithic millimeter-wave integrated circuit consisting of a high-impedance transmission line loaded by reverse-biased Schottky diodes, is studied in detail in this paper. A distributed model of the NLTL is successfully developed through the use of the microwave network theory. This model is more accurate than the lumped-element model that has been widely used before. The application of the NLTL for picosecond pulse generation, including shock-wave formation, is explained in detail based on the distributed model. Finally, the finite-difference time-domain (FDTD) technique is used to simulate the NLTL´s for the first time. The simulation results show good agreement with the experiment results, FDTD is more accurate than SPICE in the simulation of NLTL´s
Keywords :
III-V semiconductors; MIMIC; Schottky diodes; coplanar waveguide components; electric impedance; finite difference time-domain analysis; gallium arsenide; integrated circuit modelling; millimetre wave diodes; transmission line theory; CPW NLTL; FDTD simulation; GaAs; GaAs nonlinear transmission lines; MIMIC; distributed model; finite-difference time-domain technique; high-impedance transmission line; microwave network theory; millimeter-wave integrated circuit; monolithic MM-wave IC; picosecond pulse generation; reverse-biased Schottky diodes; shock-wave formation; Analytical models; Circuit simulation; Distributed parameter circuits; Finite difference methods; Gallium arsenide; Microwave theory and techniques; Millimeter wave integrated circuits; Schottky diodes; Time domain analysis; Transmission line theory;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
