DocumentCode
1530702
Title
Fabrication and characterization of giant magnetoresistive elements with an integrated test coil
Author
Kools, Jacques C S ; Ruigrok, Jaap J M ; Postma, Bert ; De Nooijer, M. Christine ; Folkerts, Wiep
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
Volume
33
Issue
6
fYear
1997
fDate
11/1/1997 12:00:00 AM
Firstpage
4513
Lastpage
4521
Abstract
Magnetoresistive elements (MREs) containing exchange-biased spin valve multilayers as the magnetoresistive material have been fabricated. Their electrical response has been measured using an integrated test coil. Both parallel and crossed arrangements of the easy axes of the free and biased layers have been studied. Output voltage levels of these elements in response to an ac magnetic field are typically a factor of 7-10 higher than those obtained in similar elements based on a conventional, 30 nm thick anisotropic magnetoresistive (AMR) Ni80 Fe20 film linearized by the “barber-pole” method. The parallel arrangement is found to result in a switching behavior which is characteristic of domain wall movement and contains hysteresis, Barkhausen noise, and strong harmonic distortion. The arrangement with crossed anisotropies is found to display a behavior characteristic of switching by magnetization rotation as evidenced by a strong reduction of hysteresis, Barkhausen noise, and harmonic distortion. Demagnetization effects are calculated in order to quantitatively explain the shape of the response curve and the difference in output voltage when compared to AMR-based MREs
Keywords
Barkhausen effect; coils; demagnetisation; giant magnetoresistance; harmonic distortion; magnetic anisotropy; magnetic domain walls; magnetic hysteresis; magnetic multilayers; magnetoresistive devices; Barkhausen noise; crossed anisotropies; crossed arrangements; demagnetization effects; domain wall movement; exchange-biased spin valve multilayers; giant magnetoresistive elements; harmonic distortion; hysteresis; integrated test coil; magnetization rotation; output voltage levels; parallel arrangements; response curve; switching behavior; Anisotropic magnetoresistance; Fabrication; Giant magnetoresistance; Harmonic distortion; Magnetic field measurement; Magnetic hysteresis; Magnetic materials; Noise shaping; Spin valves; Voltage;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.649889
Filename
649889
Link To Document