Analysis of edge-coupled heterojunction phototransistors

Author

Allsopp, D.W.E. ; Stern, M.S. ; Strobel, E.

Author_Institution

Dept. of Electron. Eng., Bath Univ., UK

Volume

47

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

1289

Lastpage

1296

Abstract

The optical and electrical performance of edge-coupled InGaAs-InP heterojunction phototransistors (HPT´s), suitable for detector/mixer applications in millimeter wave radio-fiber systems, has been analyzed. It is shown that the performance can be strongly dependent on the polarization of the incident light, unless the emitter layer is sufficiently thick. A new analytical model for the optical gain of edge-coupled HPT´s is developed for strongly confined waveguide modes supported by the heterostructure. The model is shown to be useful for rapid optimization of the epitaxial structure for high transit frequency and high optical gain

Keywords

demodulation; millimetre wave receivers; optical fibre communication; optical fibre polarisation; phototransistors; InGaAs-InP; edge-coupled heterojunction phototransistors; emitter layer; incident light polarisation; millimeter wave radio-fiber systems; optical gain; rapid optimization; strongly confined waveguide modes; transit frequency; Frequency; Heterojunctions; High speed optical techniques; Optical coupling; Optical devices; Optical mixing; Optical waveguides; Photoconductivity; Phototransistors; Stimulated emission;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.775468

Filename

775468