Title :
Double-active-layer index-guided InGaAsP-InP laser diode
Author :
Kajanto, Markus ; Chen, T.R. ; Zhuang, Y.H. ; Yariv, Amnon
Author_Institution :
Dept. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
fDate :
11/1/1990 12:00:00 AM
Abstract :
A buried crescent InGaAsP-InP laser with two active layers was fabricated to study the temperature behavior of the double-carrier-confinement structure. An anomalously high characteristic temperature T0 was measured, and optical switching behavior was observed. A mode analysis and numerical calculation using a rate equation approach explained qualitatively very well the experimental results. It was revealed that both the Auger recombination in this special double-active-layer configuration and the temperature-dependent leakage current, which leads to uniform carrier distribution in both active regions, are essential to increase T0
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; Auger recombination; III-V semiconductors; buried crescent InGaAsP-InP laser; characteristic temperature; double active layer index guided InGaAsP-InP laser diode; double-active-layer configuration; double-carrier-confinement structure; mode analysis; numerical calculation; optical switching behavior; rate equation approach; temperature behavior; temperature-dependent leakage current; uniform carrier distribution; Diode lasers; Laser theory; Laser transitions; Nonlinear optics; Optical device fabrication; Physics; Scanning electron microscopy; Substrates; Temperature measurement; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
