A low noise small area self switched CMOS charge sensitive readout chain

Author

Kapnistis, C. ; Misiakos, K. ; Haralabidis, N.

Author_Institution

Inst. of Microelectron., Athens, Greece

Volume

46

Issue

3

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

133

Lastpage

138

Abstract

A CMOS charge sensitive readout chain with self switched output and small layout area, suitable for pixel applications, has been developed. The system is capable of simultaneous position sensing and energy measurement on a real time basis. Each pixel circuit incorporates both analog and digital features to perform the dual task. The performance of several charge amplifiers was tested. The impact of type and channel length of the input transistor on the system noise was investigated. The read out electronics have been designed and fabricated in CMOS 0.8 μm technology. The overall gain of the chain is 620 mV/fC, while the ENC is 58 e rms at a 140 nsec shaping time and a 105 fF detector capacitance. With a power consumption of 1.8 mW per pixel at 3.3 V, it is a promising solution for X-ray pixel detectors. The paper describes the system architecture and reports experimental measurements

Keywords

CMOS integrated circuits; X-ray detection; nuclear electronics; readout electronics; X-ray pixel detectors; charge amplifiers; energy measurement; input transistor; low noise small area self switched CMOS charge sensitive readout chain; pixel applications; position sensing; read out electronics; real time basis; self switched output; system noise; CMOS technology; Capacitance; Circuit noise; Circuit testing; Detectors; Energy consumption; Energy measurement; Noise shaping; Real time systems; X-ray detection;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.775502

Filename

775502