Title :
GaN-based Implanted self switching diodes for THz imaging
Author :
Sangare, Paul ; Ducournau, Guillaume ; Grimbert, Bertrand ; Faucher, Marc ; Iniguez-de-la-Torre, I. ; Gonzalez, Temoatzin ; Mateos, Javier ; Gaquiere, Christopher
Author_Institution :
IEMN, Univ. de Lille 1, Villeneuve-d´Ascq, France
Abstract :
We report on Gallium Nitride Self switching Diode used as detector in a terahertz imaging system. We propose to use the ionic implantation to define the nano-channels in the device, leading to an improved sensitivity in the mm-wave/THz regime. Preliminary results are given at 200 GHz.
Keywords :
III-V semiconductors; gallium compounds; ion implantation; semiconductor diodes; terahertz wave detectors; terahertz wave imaging; wide band gap semiconductors; frequency 200 GHz; ionic implantation; self switching diodes; terahertz imaging system; Antenna measurements; Detectors; Gallium nitride; Imaging; Nanoscale devices; Semiconductor diodes; Switches;
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
DOI :
10.1109/IRMMW-THz.2014.6956255
