• DocumentCode
    1530996
  • Title

    Siucon-on-sapphire device photoconduction predictions

  • Author

    Phillips, D.H.

  • Author_Institution
    Rockwell International Corporation Anaheim, California
  • Volume
    21
  • Issue
    6
  • fYear
    1974
  • Firstpage
    217
  • Lastpage
    220
  • Abstract
    The linear sapphire photoconductance approximation was used to model dose-rate effects in CMOS/SOS inverters. From this model, optimum values were derived for the ratio of n-channel to p-channel transistor gate width, thereby maximizing the dose-rate failure threshold.
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1974.6498931
  • Filename
    6498931
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1530996