Title :
2D write addressability of tunneling junction MRAM elements
Author :
Fang, Tzu-Ning ; Zhu, Jian-Gang
Author_Institution :
Data Storage Center, Carnegie Mellon Univ., Pittsburgh, PA, USA
fDate :
7/1/2001 12:00:00 AM
Abstract :
In magnetic tunneling junction MRAM devices, write addressing of each individual memory element is accomplished by using an x-y grid of word lines, which generate easy and hard axis fields. We present a systematic micromagnetic modeling study of switching behavior with both easy and hard axis fields for memory elements with ends tapered into various angles and at different aspect ratios. The write margin and addressability are discussed
Keywords :
magnetic heads; magnetic multilayers; magnetic switching; magnetisation reversal; random-access storage; spin valves; tunnelling; 2D write addressability; easy axis fields; hard axis fields; magnetisation reversal; micromagnetic modeling; patterned memory elements; switching behavior; tunneling junction MRAM elements; word lines; write margin; x-y grid; Antiferromagnetic materials; Magnetic anisotropy; Magnetic films; Magnetic switching; Magnetic tunneling; Mesh generation; Micromagnetics; Perpendicular magnetic anisotropy; Saturation magnetization; Shape;
Journal_Title :
Magnetics, IEEE Transactions on
