DocumentCode
1531010
Title
2D write addressability of tunneling junction MRAM elements
Author
Fang, Tzu-Ning ; Zhu, Jian-Gang
Author_Institution
Data Storage Center, Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume
37
Issue
4
fYear
2001
fDate
7/1/2001 12:00:00 AM
Firstpage
1963
Lastpage
1966
Abstract
In magnetic tunneling junction MRAM devices, write addressing of each individual memory element is accomplished by using an x-y grid of word lines, which generate easy and hard axis fields. We present a systematic micromagnetic modeling study of switching behavior with both easy and hard axis fields for memory elements with ends tapered into various angles and at different aspect ratios. The write margin and addressability are discussed
Keywords
magnetic heads; magnetic multilayers; magnetic switching; magnetisation reversal; random-access storage; spin valves; tunnelling; 2D write addressability; easy axis fields; hard axis fields; magnetisation reversal; micromagnetic modeling; patterned memory elements; switching behavior; tunneling junction MRAM elements; word lines; write margin; x-y grid; Antiferromagnetic materials; Magnetic anisotropy; Magnetic films; Magnetic switching; Magnetic tunneling; Mesh generation; Micromagnetics; Perpendicular magnetic anisotropy; Saturation magnetization; Shape;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.951022
Filename
951022
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