Influence of ion beam milling parameters on MRAM switching

Author

Sousa, Ricardo C. ; Freitas, Paulo P.

Author_Institution

Dept. of Phys., Inst. Superior Tecnico, Lisbon, Portugal

Volume

37

Issue

4

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

1973

Lastpage

1975

Abstract

The influence of the ion milling parameters on the magnetization reversal of patterned NiFe/CoFe layers is investigated. In 4 μm×2 μm ellipse elements switching of the magnetization occurs through a two step process. The first step is associated with domain wall propagation and the second with vortex annihilation. Reversal fields are reduced by ion milling at low angles (25°-35°). Magnetization reversal fields also show a dependence on ion energy. Milling at low ion energies reduces the switching field and dispersion values. Lower magnetization reversal fields are obtained for thinner layers

Keywords

cobalt alloys; giant magnetoresistance; iron alloys; machining; magnetic multilayers; magnetic switching; magnetisation reversal; nickel alloys; random-access storage; spin valves; sputter etching; MRAM switching; NiFe-CoFe; domain wall propagation; ion beam milling parameters; ion energy dependence; magnetization reversal; patterned layers; remanence; two step process; vortex annihilation; Argon; Ion beams; Magnetic separation; Magnetic switching; Magnetization reversal; Magnetostatics; Milling; Resists; Saturation magnetization; Shape;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.951025

Filename

951025