Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

Author

Casagrande, L. ; Barnett, B.M. ; Bartalini, P. ; Bell, W.H. ; Borer, K. ; Bowcock, T. ; Buytaert, J. ; Chochula, P. ; Collins, P. ; Da Viá, C. ; Dijkstra, H. ; Dormond, O. ; Esposito, A. ; Frei, R. ; Granata, V. ; Janos, S. ; Konorov, I. ; Lourenço, C. ;

Author_Institution

LIP, Lisbon, Portugal

Volume

46

Issue

3

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

228

Lastpage

231

Abstract

In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of ~4×10¹⁴ p/cm², no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T<120 K. Besides confirming the previously observed `Lazarus effect´ in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments

Keywords

radiation hardening (electronics); silicon radiation detectors; DELPHI microstrip detector; Lazarus effect; Si; cryogenic temperatures; heavily irradiated double-sided silicon microstrip detector; heavily irradiated silicon detectors; Charge carrier processes; Cryogenics; Diodes; Electron traps; Leakage current; Microstrip; Radiation detectors; Silicon radiation detectors; Temperature; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.775519

Filename

775519