Anisotropy control of magnetostrictive film patterns

Author

Imamura, Kouki ; Shin, Kwang-Ho ; Ishiyama, Kazushi ; Inoue, Mitsuteru ; Arai, Ken Ichi

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

Volume

37

Issue

4

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

2025

Lastpage

2027

Abstract

The magnetic properties of Fe-based amorphous films are thought to be highly sensitive to strain due to the large saturation magnetostriction and soft magnetic properties exhibited by the films. This is why patterned FeCoSiB films exhibit a large variation in their high-frequency impedance when strain is applied. To increase the sensitivity of strain sensors, it is very important to control the magnitude of magnetic anisotropy. We propose a method to control the magnetic anisotropy by stress bias annealing. By applying stress during annealing, we were able to control the anisotropy along the width of the patterned film. A strain sensor using a transverse-anisotropy-induced film pattern exhibited a figure of merit F≈8300, while a sensor without anisotropy exhibited F of only 500

Keywords

amorphous magnetic materials; boron alloys; cobalt alloys; ferromagnetic materials; iron alloys; magnetic anisotropy; magnetic thin film devices; magnetostrictive devices; silicon alloys; strain sensors; FeCoSiB; anisotropy control; figure of merit; high-frequency impedance; magnetic anisotropy; magnetostrictive film patterns; saturation magnetostriction; soft magnetic properties; strain sensors; stress bias annealing; transverse-anisotropy-induced film pattern; Anisotropic magnetoresistance; Capacitive sensors; Magnetic anisotropy; Magnetic field induced strain; Magnetic films; Magnetic properties; Magnetic sensors; Magnetostriction; Perpendicular magnetic anisotropy; Stress control;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.951042

Filename

951042