Title :
Dynamic domain observation in narrow thin films
Author :
Takezawa, Masaaki ; Yamasaki, Jiro
Author_Institution :
Dept. of Electr. Eng., Kyushu Inst. of Technol., Kitakyushu, Japan
fDate :
7/1/2001 12:00:00 AM
Abstract :
We examined the domain structure of high-frequency carrier-type thin-film magnetic field sensors that consist of narrow rectangular CoNbZr thin film to clarify the magnetization process of the sensor head. Moreover, the cause of disagreement between measured and calculated sensitivities was investigated. The measured impedance change of the sensor head can be explained qualitatively by consideration of the wall displacement owing to the growth of the closure domain
Keywords :
cobalt alloys; magnetic domain walls; magnetic sensors; magnetic thin film devices; niobium alloys; zirconium alloys; CoNbZr; CoNbZr thin film; HF carrier-type thin-film sensors; closure domain growth; domain structure; dynamic domain observation; high-frequency carrier; magnetic field sensors; magnetization process; narrow thin films; sensor head impedance change; wall displacement; Displacement measurement; Impedance measurement; Magnetic domain walls; Magnetic field measurement; Magnetic films; Magnetic heads; Magnetic sensors; Magnetization processes; Thin film sensors; Transistors;
Journal_Title :
Magnetics, IEEE Transactions on
