Improved pulse carrier MI effect by flash anneal of amorphous wires and FM wireless CMOS IC torque sensor

Author

Cai, Chang Mei ; Mohri, Kaneo ; Honkura, Yoshinobu ; Yamamoto, Michiharu

Author_Institution

Dept. of Electr. Eng., Nagoya Univ., Japan

Volume

37

Issue

4

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

2038

Lastpage

2041

Abstract

A figure of merit (FOM) for the magneto-impedance (MI) effect is defined by the product of the MI ratio and the cut-off frequency for ac field detection as (|∂Z/∂Hex|/Z₀)·f_cutoff. The FOM for almost zero-magnetostrictive amorphous wire of 30 μm diameter was about improved 2.5 times by twisting and flash annealing using a pulse current of 80 mA, 1 second. A sensitive, quick response, and low power consumption wireless FM type MI sensor is constituted using the high FOM amorphous wire head combined with all CMOS IC sensor circuit. The wireless MI sensor is successfully applied to a torque sensor fixed on an automobile power steering steel

Keywords

CMOS integrated circuits; amorphous magnetic materials; magnetic sensors; magnetoresistive devices; torque; 30 micron; 80 mA; CMOS IC sensor circuit; ac field detection; amorphous wires; automobile power steering steel; cut-off frequency; flash anneal; magneto-impedance effect; pulse carrier MI effect; torque sensor; wireless FM type MI sensor; Amorphous magnetic materials; Amorphous materials; Annealing; CMOS integrated circuits; Cutoff frequency; Energy consumption; Magnetic heads; Torque; Wire; Wireless sensor networks;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.951046

Filename

951046