Title :
Miniaturized high-frequency carrier-type thin-film magnetic field sensor with high sensitivity
Author :
Kikuchi, H. ; Ajiro, N. ; Yamaguchi, M. ; Arai, K.I. ; Takezawa, M.
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fDate :
7/1/2001 12:00:00 AM
Abstract :
This paper discusses miniaturization and the sensitivity of a high-frequency carrier-type thin-film magnetic field sensor. We examined a lift-off process as the fabrication process instead of ion-milling process to obtain an even edge and higher sensitivity when the sensor is miniaturized. Then, we used a thin conductive interlayer to control the domain structure and demonstrated high sensitivity. The sensor dimensions were miniaturized to 3 μm wide, 1 μm thick and 1 mm long. In this instance, an impedance change of 3 Ω against external dc field was obtained. Moreover, a gain of 150 kΩ/T was achieved
Keywords :
giant magnetoresistance; magnetic domains; magnetic field measurement; magnetic sensors; magnetic thin film devices; magnetoresistive devices; 1 micron; 3 micron; carrier-type thin-film magnetic field sensor; domain structure; external dc field; fabrication process; impedance change; lift-off process; sensitivity; thin conductive interlayer; Amorphous magnetic materials; Fabrication; Magnetic anisotropy; Magnetic films; Magnetic sensors; Niobium; Pharmaceutical technology; Sputtering; Thick film sensors; Thin film sensors;
Journal_Title :
Magnetics, IEEE Transactions on
