DocumentCode :
1531476
Title :
Electrical and optical properties of the three-terminal double-heterostructure optoelectronic switch
Author :
Simmons, John G. ; Taylor, G.W.
Author_Institution :
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada
Volume :
26
Issue :
11
fYear :
1990
fDate :
11/1/1990 12:00:00 AM
Firstpage :
1954
Lastpage :
1963
Abstract :
A theory is developed for the three-terminal version of the double-heterojunction optoelectronic switch (DOES), in which the third terminal, the injector, makes ohmic contact to the active layer of the device. The injector permits the biasing of the active-layer-substrate junction, the effect of which is to reduce the threshold voltage at which switching from the electrical and optical OFF-state to the ON-state occurs. Reverse baising the junction initiates switching from the ON- to the OFF-state. The current and optical output as a function of voltage with the injector current as a parametric variable are plotted in terms of the physical and geometrical properties of the device
Keywords :
optical bistability; optical switches; optoelectronic devices; active-layer-substrate junction; biasing; electrical properties; geometrical properties; injector; injector current; ohmic contact; optical properties; parametric variable; theory; third terminal; three-terminal double-heterostructure optoelectronic switch; threshold voltage; Charge carrier processes; Current density; Geometrical optics; Impedance; Nonlinear optics; Optical bistability; Optical devices; Optical switches; P-n junctions; Voltage;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.62114
Filename :
62114
Link To Document :
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