• DocumentCode
    1531531
  • Title

    Thermal and Mechanical Considerations for Silicon-Resin High-Density Substrate

  • Author

    Smith, Brian ; Kwok, Peter ; Thompson, Jeffrey ; Mueller, Andrew ; Racz, Livia

  • Author_Institution
    Draper Lab., Cambridge, MA, USA
  • Volume
    2
  • Issue
    7
  • fYear
    2012
  • fDate
    7/1/2012 12:00:00 AM
  • Firstpage
    1092
  • Lastpage
    1098
  • Abstract
    We examine the thermomechanical tradeoffs in a novel technology for high-density interconnect substrates. Fabricated from silicon (Si) wafers with planar cavities of highly filled composite encapsulant, the technology leverages established Si photolithography but offers improved mechanical properties. Modules are subject to thermomechanical stress during encapsulant cure, assembly reflow, module fabrication, and operation. We show that improvements in junction-to-ambient sinking offset the heat density increase in such systems and low expansion encapsulants prevent failure during cure and subsequent processing. We employ finite element modeling and materials testing to show the effect of wafer design and material selection on the in-plane and through-plane stresses in the module.
  • Keywords
    elemental semiconductors; finite element analysis; integrated circuit interconnections; integrated circuit manufacture; materials testing; photolithography; silicon; Si; assembly reflow; encapsulant cure; finite element modeling; heat density; high-density interconnect substrates; high-density substrate; in-plane stresses; junction-to-ambient sinking offset; low expansion encapsulants; material selection; materials testing; module fabrication; photolithography; thermomechanical stress; through-plane stresses; wafer design; wafers; Cavity resonators; Integrated circuit interconnections; Silicon; Stress; Substrates; Thermomechanical processes; High density integration; miniaturized packaging; thermomechanical stress;
  • fLanguage
    English
  • Journal_Title
    Components, Packaging and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    2156-3950
  • Type

    jour

  • DOI
    10.1109/TCPMT.2012.2198645
  • Filename
    6211407