DocumentCode
1531844
Title
A Fully-Integrated, Short-Range, Low Data Rate FM-UWB Transmitter in 90 nm CMOS
Author
Saputra, Nitz ; Long, John R.
Author_Institution
Electron. Res. Lab., Delft Univ. of Technol., Delft, Netherlands
Volume
46
Issue
7
fYear
2011
fDate
7/1/2011 12:00:00 AM
Firstpage
1627
Lastpage
1635
Abstract
This paper presents a fully-integrated 3-5 GHz-band FM-UWB transmitter implemented in 90 nm bulk CMOS. The front-end consists of an RF current-controlled oscillator (RF-ICO) and class-AB power amplifier. Transmit data modulates a sub-carrier oscillator. The 2-FSK modulated output is amplified by a transconductor, and directly modulates the RF-ICO tune input. A successive approximation register (SAR) algorithm and on-chip all-digital frequency-locked loop (FLL) calibrate the carrier and sub-carrier frequencies. All voltage and current references required by the transmitter are included on-chip. The 0.2 × 0.5 mm2 active area transmitter consumes 900 μW from a 1 V supply. Energy efficiency of the transmitter is 9 nJ/bit running continuously at 100 kbits/s.
Keywords
CMOS integrated circuits; field effect MMIC; frequency locked loops; frequency shift keying; microwave power amplifiers; radio transmitters; ultra wideband communication; FSK modulated output; RF current-controlled oscillator; all-digital frequency-locked loop; bandwidth 3 GHz to 5 GHz; bulk CMOS; class-AB power amplifier; fully-integrated FM-UWB transmitter; power 900 muW; size 90 nm; sub-carrier oscillator; successive approximation register; transconductor; voltage 1 V; Calibration; Frequency shift keying; Oscillators; Radio frequency; Radio transmitters; FM-UWB; RF transmitter; RF-CMOS; Ultrawideband; frequency-locked loop calibration; low power transmitter; successive approximation; wideband FM modulator;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2011.2144050
Filename
5783311
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