Title :
Single-Side Fabricated Pressure Sensors for IC-Foundry-Compatible, High-Yield, and Low-Cost Volume Production
Author :
Wang, Jiachou ; Li, Xinxin
Author_Institution :
State Key Lab. of Transducer Technol. & Sci., Chinese Acad. of Sci., Shanghai, China
fDate :
7/1/2011 12:00:00 AM
Abstract :
In this letter, a new low-cost and high-yield manufacturing technique for volume production of pressure sensors is proposed and developed. The IC-foundry-compatible process is conducted only from the front side of (111) silicon wafers, without double-sided alignment exposure, wafer bonding, and double-sided polished wafers needed. With the single-wafer-based single-side bulk-micromachining technique, the sensor chip size is as small as 0.6 mm × 0.6 mm that facilitates low-cost high-throughput IC-foundry batch fabrication. Compared with the conventional double-sided micromachining approach where the pressure-sensing diaphragm thickness is determined by back-side deep etching, the front-side micromachining scheme uses front-side shallow etching that provides more precise and uniform control to the thickness for higher yield. 0.087-mV/kPa sensitivity and ±0.09%FS nonlinearity are measured for the fabricated 750-kPa range sensor, and the temperature coefficient of offset ( TCO) is as low as -0.032%/ °C ·FS. With the new technique, the sensors are promising in automotive and consumer electronics applications.
Keywords :
batch processing (industrial); etching; integrated circuit yield; micromachining; wafer bonding; IC foundry batch fabrication; IC foundry compatible process; back-side deep etching; consumer electronics; double-sided alignment exposure; double-sided micromachining; double-sided polished wafer; high-yield manufacturing; high-yield volume production; low cost manufacturing; low cost volume production; pressure 750 kPa; pressure-sensing diaphragm thickness; sensor chip size; single-side fabricated pressure sensors; single-wafer-based single-side bulk-micromachining technique; wafer bonding; Cavity resonators; Etching; Fabrication; Piezoresistance; Sensitivity; Sensors; Silicon; IC-compatible fabrication; piezoresistance; pressure sensor; single-wafer single-side micromachining;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2147272