DocumentCode
1532091
Title
Comments on "Sinlultaneous determination of transistor noise, gain, and scattering parameters for amplifier design through noise figure measurements only"
Author
Pospieszalski, M.W.
Author_Institution
Nat. Radio Astron. Obs., Charlottesville, VA, USA
Issue
2
fYear
1986
fDate
6/1/1986 12:00:00 AM
Firstpage
228
Lastpage
228
Abstract
It is noted that in the above named work (see ibid., vol.IM-35, p.89-91, March 1985) expression (4) appears to be correct only if the physical temperature Ta of an isolator is equal to the standard temperature T0=290K. The correct expression for the case Ta≠TO=290K is given. In replying, the original authors note that the correction does not affect noise characterization of transistors at room temperature (Ta≡297K≡TO=290K). A more complete relationship for F´(S´22) is also noted.
Keywords
S-parameters; amplification; amplifiers; electric noise measurement; network synthesis; transistor circuits; amplifier design; electric noise measurement; gain; noise figure measurement; scattering parameters; transistor circuit design; transistor noise;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/TIM.1986.6499097
Filename
6499097
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