• DocumentCode
    1532091
  • Title

    Comments on "Sinlultaneous determination of transistor noise, gain, and scattering parameters for amplifier design through noise figure measurements only"

  • Author

    Pospieszalski, M.W.

  • Author_Institution
    Nat. Radio Astron. Obs., Charlottesville, VA, USA
  • Issue
    2
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    228
  • Lastpage
    228
  • Abstract
    It is noted that in the above named work (see ibid., vol.IM-35, p.89-91, March 1985) expression (4) appears to be correct only if the physical temperature Ta of an isolator is equal to the standard temperature T0=290K. The correct expression for the case Ta≠TO=290K is given. In replying, the original authors note that the correction does not affect noise characterization of transistors at room temperature (Ta≡297K≡TO=290K). A more complete relationship for F´(S´22) is also noted.
  • Keywords
    S-parameters; amplification; amplifiers; electric noise measurement; network synthesis; transistor circuits; amplifier design; electric noise measurement; gain; noise figure measurement; scattering parameters; transistor circuit design; transistor noise;
  • fLanguage
    English
  • Journal_Title
    Instrumentation and Measurement, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9456
  • Type

    jour

  • DOI
    10.1109/TIM.1986.6499097
  • Filename
    6499097