• DocumentCode
    1532294
  • Title

    Single Trench SiON Waveguide TE-TM Mode Converter

  • Author

    Nakayama, Kenichi ; Shoji, Yuya ; Mizumoto, Tetsuya

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
  • Volume
    24
  • Issue
    15
  • fYear
    2012
  • Firstpage
    1310
  • Lastpage
    1312
  • Abstract
    A TE-TM mode converter fabricated in a single trench SiON waveguide is described. The device has the advantage that only single masking and etching process is needed to fabricate it. We discuss the design of the mode converter from the view point of fabrication tolerance. The single trench structure is fabricated using the reactive ion-etch lag phenomenon. A 97% TE-TM mode conversion (extinction ratio=15 dB) is demonstrated at a wavelength of 1.27μm . An excess loss is measured to be 0.8 dB.
  • Keywords
    integrated optics; optical fabrication; optical waveguides; silicon compounds; sputter etching; SiON; etching process; reactive ion etch lag phenomenon; single masking process; single trench waveguide; transverse electrric-transverse magnetic mode converter; wavelength 1.27 mum; Etching; Loss measurement; Optical device fabrication; Optical waveguides; Silicon; Wavelength measurement; Photonic integrated circuits (PICs); TE-TM mode converter; polarization rotator; silicon oxynitride;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2012.2202646
  • Filename
    6212310
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1532294