Title :
CMOS symmetric trace differential stacked spiral inductor
Author :
Kim, Jung-Ho ; Kim, Heonhwan
Author_Institution :
Dept. of Electron. & Comput. Eng., Hanyang Univ., Seoul, South Korea
fDate :
7/1/2010 12:00:00 AM
Abstract :
A miniature silicon-based symmetric trace differential stacked spiral inductor (SDSSI) has been implemented using standard 0.18 μm CMOS technology. Based on the measured two-port S-parameter using a standard de-embedding procedure, the self-resonance frequency (fsr) and quality factor (Q) of the SDSSI were compared to a conventional differential stacked spiral inductor (DSSI). The fsr of the SDSSI was nearly 2.5 times higher than that of the DSSI, and the Q value of the SDSSI was also enhanced.
Keywords :
CMOS integrated circuits; Q-factor; S-parameters; inductors; silicon; CMOS symmetric trace differential stacked spiral inductor; Si; deembedding procedure; miniature silicon; quality factor; self-resonance frequency; size 1.8 mum; two-port S-parameter;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.1234
