Title :
Magnetic properties of water-based sol-gel derived BaFe12O19/SiO2/Si(100) thin films
Author :
An, Sung Yong ; Lee, Sang Won ; Shim, In-Bo ; Kim, Chul Sung
Author_Institution :
Dept. of Phys., Kookmin Univ., Seoul, South Korea
fDate :
7/1/2001 12:00:00 AM
Abstract :
Thin films with barium hexaferrite (BaM) layers on thermally oxidized silicon wafers were fabricated by water-based sol-gel method. Polycrystalline BaFe12O19/SiO2/Si(100) thin films were characterized with Rutherford backscattering, X-ray diffraction, vibrating sample magnetometer, and atomic force microscope as well as Fourier transform infrared spectroscopy (FT-IR). The thin films were annealed at 600-900°C in air for 2 hours. The pattern for the sample annealed at a temperature above 650°C indexed well on the M-type hexagonal structure and no other phases were detectable. The films were composed of uniformly distributed hexagonal-type grains, with diameters between 400 and 600 Å. Surface roughness of the films was between 20 and 40 Å. The perpendicular coercivity HC⊥ and in-plane one HC|| were 4766 Oe and 4380 Oe, respectively, at room temperature under an applied field of 10 kOe annealed at 650°C for 2 hours
Keywords :
Fourier transform spectra; Rutherford backscattering; X-ray diffraction; annealing; atomic force microscopy; barium compounds; coercive force; ferrites; grain size; infrared spectra; magnetic thin films; perpendicular magnetic anisotropy; perpendicular magnetic recording; silicon; silicon compounds; sol-gel processing; surface topography; 600 to 900 C; BaFe12O19; BaFe12O19-SiO2-Si; FTIR spectra; M-type hexagonal structure; Rutherford backscattering; X-ray diffraction; annealing; atomic force microscopy; crystallite size; grain size; hexaferrite thin films; in-plane coercivity; magnetic properties; perpendicular coercivity; polycrystalline films; room temperature; surface roughness; thermally oxidized silicon wafers; uniformly distributed hexagonal-type grains; vibrating sample magnetometry; water-based sol-gel derived films; Annealing; Atomic force microscopy; Backscatter; Barium; Magnetic properties; Semiconductor thin films; Silicon; Temperature; Transistors; X-ray diffraction;
Journal_Title :
Magnetics, IEEE Transactions on
