• DocumentCode
    1532504
  • Title

    Thermal instability of copper gate AlGaN/GaN HEMT on Si substrate

  • Author

    Park, Jongho ; Lee, Kahyun ; Cha, Ho-Young ; Seo, Kazuyuki

  • Author_Institution
    Dept. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
  • Volume
    46
  • Issue
    14
  • fYear
    2010
  • fDate
    7/1/2010 12:00:00 AM
  • Firstpage
    1011
  • Lastpage
    1012
  • Abstract
    Thermal reliability of nickel (Ni) and copper (Cu) gate AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. Though the current-voltage characteristics of as-deposited Cu gate AlGaN/GaN HEMTs is superior to those of Ni gate AlGaN/GaN HEMTs, severe degradation was observed after aging at 220°C. This instability problem should be carefully taken into account in practical applications of Cu gate AlGaN/GaN HEMTs.
  • Keywords
    aluminium compounds; gallium compounds; high electron mobility transistors; reliability; silicon; substrates; wide band gap semiconductors; AlGaN-GaN; Cu; HEMT; Ni; Si; copper gate; high electron mobility transistors; substrate; temperature 220 C; thermal instability; thermal reliability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.1485
  • Filename
    5507620
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1532504