Title :
Transfer of InP-based HBV epitaxy onto borosilicate glass substrate by anodic bonding
Author :
Dastjerdi, M.H.T. ; Sanz-Velasco, A. ; Vukusic, Josip ; Sadeghi, Mohammadreza ; Stake, Jan
Author_Institution :
Dept. of Microtechnol. & Nanosci. - MC2, Chalmers Univ. of Technol., Göteborg, Sweden
fDate :
7/1/2010 12:00:00 AM
Abstract :
A new fabrication process is presented for epitaxial transfer of InP-based heterostructure barrier varactor diodes, as high-frequency varactor multipliers, onto low-dielectric borosilicate glass substrate, employing anodic bonding. The fabricated diodes on the new host substrate display symmetric electrical characteristics with only minor differences compared to those of the reference devices on the original InP substrate.
Keywords :
III-V semiconductors; borosilicate glasses; epitaxial growth; indium compounds; integrated circuit bonding; semiconductor diodes; substrates; varactors; HBV epitaxy; InP; borosilicate glass substrate; electrical characteristics; employing anodic bonding; fabricated diodes; fabrication process; heterostructure barrier; high-frequency varactor multipliers; host substrate display; varactor diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.0760
