DocumentCode :
1532512
Title :
1 ,\\times, 4 Ge-on-SOI PIN Photodetector Array for Parallel Optical Interconnects
Author :
Xue, Chunlai ; Xue, Haiyun ; Cheng, Buwen ; Hu, Weixuan ; Yu, Yude ; Wang, Qiming
Author_Institution :
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China
Volume :
27
Issue :
24
fYear :
2009
Firstpage :
5687
Lastpage :
5689
Abstract :
High-quality Ge film was epitaxially grown on silicon on insulator using the ultrahigh vacuum chemical vapor deposition. In this paper, we demonstrated that the efficient 1 ?? 4 germanium-on-silicon p-i-n photodetector arrays with 1.0 ??m Ge film had a responsivity as high as 0.65 A/W at 1.31 ??m and 0.32 A/W at 1.55 ??m, respectively. The dark current density was about 0.75 mA/cm2 at 0 V and 13.9 mA/cm2 at 1.0 V reverse bias. The detectors with a diameter of 25 ??m were measured at 1550 nm incident light under 0 V bias, and the result showed that the 3-dB bandwidth is 2.48 GHz. At a reverse bias of 3 V, the bandwidth is about 13.3 GHz. The four devices showed a good consistency.
Keywords :
chemical vapour deposition; dark conductivity; elemental semiconductors; germanium; integrated optics; integrated optoelectronics; optical interconnections; p-i-n photodiodes; photodetectors; semiconductor epitaxial layers; semiconductor growth; silicon-on-insulator; Ge-Si; bandwidth 2.48 GHz; dark current density; germanium-on-silicon p-i-n photodetector arrays; parallel optical interconnects; silicon-on-insulator; ultrahigh vacuum chemical vapor deposition; wavelength 1.31 mum; wavelength 1.55 mum; Integrated optoelectronics; optical communication; optical interconnections; optoelectronic devices; photo detector arrays;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2009.2035090
Filename :
5306129
Link To Document :
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