DocumentCode
1532513
Title
Switching behavior and its strain dependence in epitaxial CrO2 thin films
Author
Spinu, L. ; Srikanth, H. ; O´Connor, C.J. ; Gupta, A. ; Li, X.W. ; Xiao, Gang
Author_Institution
AMRI, New Orleans Univ., LA, USA
Volume
37
Issue
4
fYear
2001
fDate
7/1/2001 12:00:00 AM
Firstpage
2596
Lastpage
2598
Abstract
Chromium dioxide thin films grown epitaxially on TiO2 substrates exhibited a strong in-plane uniaxial anisotropy. Field dependence of high frequency (106 Hz) transverse susceptibility (χT) measurements were used to probe the magnetic anisotropy and switching in CrO2 films for varying temperature (10 to 300 K) and different orientations of the applied field with respect to the magnetic easy axis. Singular peaks in χ T were observed and are associated with the anisotropy and switching fields. The χT data at low temperatures reveal an unusual variation of the singular peaks. This can be described by including magnetoelastic contributions resulting from the in-plane tensile strain in the film due to lattice mismatch with the substrate
Keywords
chromium compounds; ferromagnetic materials; magnetic anisotropy; magnetic epitaxial layers; magnetic susceptibility; magnetic switching; magnetoelastic effects; soft magnetic materials; 10 to 300 K; CrO2; HF transverse susceptibility; anisotropy fields; epitaxial thin films; in-plane tensile strain; lattice mismatch; magnetic field dependence; magnetic switching; magnetoelastic contributions; magnetoelastic energy; soft ferromagnet; strain dependence; strong in-plane uniaxial anisotropy; switching fields; temperature dependence; Anisotropic magnetoresistance; Capacitive sensors; Chromium; Frequency measurement; Magnetic anisotropy; Magnetic field measurement; Magnetic susceptibility; Perpendicular magnetic anisotropy; Substrates; Transistors;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.951246
Filename
951246
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