Title :
Charge dissipation layer based on conductive polymer for electron-beam patterning of bulk zinc oxide
Author :
Dylewicz, R. ; Lis, S. ; De La Rue, Richard M. ; Rahman, Farin
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
fDate :
7/1/2010 12:00:00 AM
Abstract :
The ability of thin conductive polythiophene layers to dissipate electrons in electron-beam lithography (EBL) process on bulk zinc oxide (ZnO) samples is shown. High energy electron-beam exposure of relatively thick (650 nm-thick) hydrogen silsesquioxane (HSQ) negative-type resist deposited on ZnO was investigated for three different cases. In turn, no charge dissipation layer, 40 nm-thick Al and 100 nm-thick conductive polymer layers were used on the top of HSQ resist. A quick and inexpensive processing method with the use of polymer is shown for an EBL exposure of dense and high-resolution patterns in HSQ/ZnO samples.
Keywords :
aluminium; conducting polymers; electron beam lithography; nanolithography; resists; wide band gap semiconductors; zinc compounds; EBL process; HSQ resist; ZnO; charge dissipation layer; conductive polymer; conductive polymer layers; electron beam lithography; electron beam patterning; high energy electron beam exposure; hydrogen silsesquioxane; processing method; size 100 nm; size 40 nm; thin conductive polythiophene layers; wide band gap semiconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.1282
