DocumentCode :
1532650
Title :
A Comprehensive Study of the Resistive Switching Mechanism in 
-Structured RRAM
Author :
Kim, Sungho ; Choi, Yang-Kyu
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Volume :
56
Issue :
12
fYear :
2009
Firstpage :
3049
Lastpage :
3054
Abstract :
The conduction mechanism and resistive switching properties in a resistive-random-access-memory device composed of Al(top)/TiOx/TiO2/Al( bottom) are investigated in this paper. The active-top-electrode (TE) material aluminum interacted with the TiO2 layer and induced an oxygen-deficient TiOx layer near the TE. The naturally formed oxygen-deficient TiOx layer was confirmed by a transmission-electron-microscope energy-dispersive X-ray spectrometry analysis. The oxygen-deficient TiOx region acted as a trap for electrons and contributed to the resistive switching. The proposed mechanism and measured data are verified through simulation of a two-variable resistor model.
Keywords :
X-ray chemical analysis; X-ray spectrometers; aluminium; electric admittance; electrical resistivity; random-access storage; titanium compounds; transmission electron microscopes; Al-TiO-TiO2-Al; RRAM; active-top-electrode; conduction mechanism; energy-dispersive X-ray spectrometry analysis; resistive switching; resistive-random-access-memory device; transmission-electron-microscope; two-variable resistor model; Aluminum; Conducting materials; Electrodes; Electron traps; Inorganic materials; Magnetic materials; Mechanical factors; Random access memory; Resistors; Spectroscopy; Tellurium; $hbox{TiO}_{x}$
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2032597
Filename :
5306148
Link To Document :
