Title :
ACCNT—A Metallic-CNT-Tolerant Design Methodology for Carbon-Nanotube VLSI: Concepts and Experimental Demonstration
Author :
Lin, Albert ; Patil, Nishant ; Wei, Hai ; Mitra, Subhasish ; Wong, H. S Philip
Author_Institution :
Stanford Univ., Stanford, CA, USA
Abstract :
We demonstrate ACCNT (pronounced as ldquoaccentrdquo), a solution to the metallic-nanotube problem that does not require any metallic-nanotube removal of any kind. ACCNT uses asymmetrically correlated carbon nanotubes to achieve metallic-nanotube tolerance, delivering high on-off ratios (104-106) while preserving the current drive. In addition, this metallic-nanotube tolerance can be engineered arbitrarily close to 100%. We present the ACCNT concepts in detail, verifying the concepts and underlying assumptions via experimental results. We further demonstrate inverters using ACCNT and ACCNT scalability to a wafer scale. ACCNT marks the first demonstration of a VLSI-compatible metallic-nanotube-tolerant design methodology.
Keywords :
VLSI; carbon nanotubes; field effect transistors; invertors; tolerance analysis; ACCNT; C; carbon-nanotube VLSI; inverters; metallic-CNT-tolerant design; on-off ratio; scalability; Carbon nanotubes; Design methodology; FETs; Integrated circuit technology; Inverters; Robustness; Semiconductivity; Very large scale integration; Voltage; Wires; Carbon-nanotube field-effect transistor (CNFET); correlation; nanotechnology;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2033168
