Title :
An ultra-low drift DC chopper amplifier using MOSFET for large value of signal-source resistance
Author :
Abe, Makoto ; Nakazoe, J. ; Abe, Z.
Author_Institution :
Fac. of Eng., Musashi Inst. of Technol., Tokyo, Japan
Abstract :
Describes an ultra-low drift, MOSFET, and DC chopper amplifier which can be used for signal-source resistance of 0.1 to 10 MΩ. The sensitivity of this chopper amplifier decreases with the increase in signal-source resistance. The authors found that the decrease in the sensitivity is caused mainly by the drain-substrate and source-substrate capacitances in the MOSFET, and corrected the problem by the bootstrapping method. When using bootstrapping, these capacitances are reduced, and the temperature drift due to high signal-source resistance is improved. For an input signal source of 10 MΩ, the drift is reduced to one-tenth of its original value. Thus a DC amplifier with a temperature coefficient of within ±10 nV/°C for a signal-source resistance of 0.1~10 MΩ was successively built.
Keywords :
DC amplifiers; choppers (circuits); field effect transistor circuits; 0.1 to 10 Mohm; DC chopper amplifier; IGFET; MOSFET; bootstrapping; drain-substrate; signal-source resistance of 0.1 to 10 MΩ; source-substrate capacitances; temperature drift;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.1986.6499206