High-temperature, low threshold current, and uniform operation 1×12 monolithic AlGaInAs/InP strain-compensated multiple quantum well laser array in 1.5 μm

Author

Lin, Chia-Chien ; Wu, Meng-Chyi ; Shiao, Hung-Ping ; Liu, Kuo-Shung

Author_Institution

Chunghwa Telecom Co. Ltd., Taoyuan, Taiwan

Volume

46

Issue

8

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

1614

Lastpage

1618

Abstract

In this paper, we describe the fabrication of a monolithically integrated 1×12 array of 1.5-μm AlGaInAs/InP strain-compensated multiple-quantum-well (MQW) lasers, which has high reliability and highly uniform characteristics in low threshold current, slope efficiency, and lasing wavelength. Besides, each diode on the array exhibits a high characteristic temperature of 88 K and a low slope-efficiency drop of less than 1 dB between 20-80°C and a lasing wavelength of 1510 nm at 20°C and 20 mA. Also, the diode on the array has a maximum resonance frequency of above 8 GHz or 3-dB modulation bandwidth of 12 GHz

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high-temperature electronics; indium compounds; integrated optics; laser reliability; quantum well lasers; semiconductor laser arrays; 1.5 micron; 12 GHz; 20 mA; 20 to 80 C; 8 GHz; AlGaInAs-InP; characteristic temperature; diode resonance frequency; fabrication; high temperature operation; lasing wavelength; modulation bandwidth; monolithic integration; reliability; slope efficiency; strain compensated multiple quantum well laser array; threshold current; uniform operation; Diodes; Indium phosphide; Optical arrays; Optical device fabrication; Quantum well devices; Resonance; Resonant frequency; Semiconductor laser arrays; Temperature; Threshold current;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.777148

Filename

777148