Title :
Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films
Author :
Panzer, Matthew A. ; Shandalov, Michael ; Rowlette, Jeremy A. ; Oshima, Yasuhiro ; Chen, Yi Wei ; McIntyre, Paul C. ; Goodson, Kenneth E.
Author_Institution :
Mech. Eng. Dept., Stanford Univ., Stanford, CA, USA
Abstract :
Thin-film HfO2 is a promising gate dielectric material that will influence thermal conduction in modern transistors. This letter reports the temperature dependence of the intrinsic thermal conductivity and interface resistances of 56-200-Aring-thick HfO2 films. A picosecond pump-probe thermoreflectance technique yields room-temperature intrinsic thermal conductivity values between 0.49 and 0.95 W/(mmiddotK). The intrinsic thermal conductivity and interface resistance depend strongly on the film-thickness-dependent microstructure.
Keywords :
dielectric thin films; electrical resistivity; hafnium compounds; thermal conductivity; thermoreflectance; HfO2; gate dielectric material; interface resistance; microstructure; picosecond pump-probe thermoreflectance; room-temperature; size 56 A to 200 A; thermal conduction; thermal conductivity; thermal properties; ultrathin dielectric films; Hafnium oxide; picosecond pump–probe thermometry; thermal conductivity; thermal interface resistance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2032937
