DocumentCode
1532894
Title
Analytical Model for Two-Dimensional Ion Implantation Profile in MOS-Structure Substrate
Author
Suzuki, Kunihiro ; Tanabe, Ryo ; Kojim, Shuichi
Author_Institution
Fujitsu Labs., Ltd., Atsugi, Japan
Volume
56
Issue
12
fYear
2009
Firstpage
3083
Lastpage
3089
Abstract
We derived an analytical model to obtain a 2-D impurity concentration profile for ions implanted at high-tilt angles in MOS-structure substrates. This model enabled us to simulate MOS device characteristics with a fully analytical impurity distribution where diffusion was neglected. We tested and verified that our analytical model could provide the same results as the ones obtained using a 2-D process simulator.
Keywords
MOS integrated circuits; 2D impurity concentration profile; 2D process simulator; MOS device characteristics; MOS-structure substrate; two-dimensional ion implantation profile; Analytical models; Annealing; Electric variables; Impurities; Inverse problems; Ion implantation; Lamps; MOS devices; Testing; Very large scale integration; Ion implantation; MOS; two-dimensional profile;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2009.2032621
Filename
5306183
Link To Document