AC floating body effects and the resultant analog circuit issues in submicron floating body and body-grounded SOI MOSFET´s

Author

Tseng, Ying-Che ; Huang, W. Margaret ; Monk, David J. ; Welch, Pamela ; Ford, Jenny M. ; Woo, Jason C S

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

46

Issue

8

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

1685

Lastpage

1692

Abstract

We report the extensive study on ac floating body effects of different SOI MOSFET technologies. Besides the severe kink and resultant noise overshoot and degraded-distortion in partially depleted (PD) floating body SOI MOSFET´s, we have investigated the residue ac floating body effects in fully depleted (FD) floating body SOI MOSFET´s, and the different body contacts on PD SOI technologies. It is important to note that there is a universal correlation between ac kink effect and Lorentzian-like noise overshoot regardless of whether the body is floating or grounded. In addition, it was found that third-order harmonic distortion is very sensitive to floating body induced kink or deviation on output conductance due to the finite voltage drop of body resistance. These results provide device design guidelines for SOI MOSFET technologies to achieve comparable low-frequency noise and linearity with Bulk MOSFET´s

Keywords

MOSFET; harmonic distortion; semiconductor device noise; silicon-on-insulator; AC floating body effect; analog circuit; body grounded device; degradation; fully depleted device; harmonic distortion; kink effect; noise overshoot; output conductance; partially depleted device; submicron SOI MOSFET; Analog circuits; Circuit noise; Degradation; Guidelines; Harmonic distortion; Immune system; Linearity; Low-frequency noise; MOSFET circuits; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.777157

Filename

777157