High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits

Author

Dambrine, Gilles ; Raskin, Jean-Pierre ; Danneville, François ; Vanhoenackel Janvier, D. ; Colinge, Jean-Pierre ; Cappy, Alain

Author_Institution

Dept. Hyperfrequences et Semicond., IEMN, Villeneuve d´´Ascq, France

Volume

46

Issue

8

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

1733

Lastpage

1741

Abstract

An exhaustive experimental study of the high-frequency noise properties of MOSFET in silicon-on-insulator (SOI) technology is presented. Various gate geometries are fabricated to study the influence of effective channel length, gate finger width, and gate sheet resistivity on the four noise parameters. The high level of MOSFET sensitivity to the minimum noise matching condition is demonstrated. From experimental results, optimal ways to realize ultra low noise amplifiers are discussed. The capability of the fully depleted standard SOI CMOS process for realizing low-noise amplifiers for multigigahertz portable communication systems is shown

Keywords

MOSFET; digital radio; microwave field effect transistors; personal communication networks; semiconductor device noise; silicon-on-insulator; MOSFET; effective channel length; fully depleted standard process; gate finger width; gate geometries; gate sheet resistivity; high-frequency noise properties; low-noise RF integrated circuits; minimum noise matching condition; multigigahertz portable communication systems; silicon-on-insulator-based technology; ultra low noise amplifiers; 1f noise; CMOS technology; Circuit noise; Integrated circuit noise; Integrated circuit technology; MOSFET circuits; Microwave devices; Radio frequency; Semiconductor device noise; Silicon on insulator technology;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.777164

Filename

777164