Title :
Transient photoconductivity measurements of amorphous semiconductors by subnanosecond nitrogen lasers
Author :
Lue, J.T. ; Tzeng, Chin-Ching
Author_Institution :
Dept. of Phys. & Electr. Eng., Nat. Tsing Hua Univ., Hsin Chu, China
Abstract :
Picosecond N2 lasers characterized with ultra-short pulse-width, high peak power, and simple detection installation are found very useful in diagnosing carrier behaviors of amorphous semiconductors which have low-drift mobility and a short lifetime. An impedance-matched sample holder and a fast rise-time preamplifier designed in this work provide this system with a high immunity to the background noise during the N2 laser discharge.
Keywords :
amorphous semiconductors; electrical conductivity measurement; gas lasers; measurement by laser beam; nitrogen; photoconductivity; transients; N2; N2 laser discharge; amorphous semiconductors; carrier behaviors; electrical conductivity measurement; low-drift mobility; ps; short lifetime; subnanosecond N2 laser; transient photoconductivity measurement;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.1986.6499224
