Title :
Modeling and simulation of single- and multiple-gate 2D MESFETs
Author :
Iníguez, Benjamín ; Lü, Jian-Qiang ; Hurt, Michael J. ; Peatman, William C B ; Shur, Michael S.
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
8/1/1999 12:00:00 AM
Abstract :
We describe a physically based model for a two-dimensional (2D) MESFET, a novel hetero-dimensional transistor. The model is valid for a “single” gate in which the sidewall contacts are biased together, a dual-gate configuration in which the gates are biased independently, and a multiple-gate configuration for three or more side gates. The model has been implemented in the circuit simulator AIM-SPICE. The modeling results are in good agreement with the experimental data
Keywords :
SPICE; Schottky gate field effect transistors; semiconductor device models; two-dimensional electron gas; AIM-SPICE; circuit simulator; dual-gate configuration; hetero-dimensional transistor; multiple-gate 2D MESFETs; multiple-gate configuration; physically based model; sidewall contacts; Circuit simulation; Digital circuits; Electrons; Geometry; MESFET circuits; Physics; Semiconductor devices; Solid modeling; Systems engineering and theory; Wire;
Journal_Title :
Electron Devices, IEEE Transactions on
