• DocumentCode
    1533241
  • Title

    Anomalous second breakdown failure levels in Germanium gold-bonded diodes

  • Author

    Cohn, N.S. ; Petree, M.C.

  • Author_Institution
    Naval Ordnance Lab., White Oak, Silver Spring, MD, USA
  • Volume
    21
  • Issue
    4
  • fYear
    1974
  • Firstpage
    20
  • Lastpage
    22
  • Abstract
    Pulse injection tests on germanium gold-bonded diodes showed that failure due to second breakdown may occur at lower power levels in the forward direction than in the reverse direction. The result is shown to be due to the hemispherical geometry of the junction and the associated spatial variation of the conductivity modulation. Variation between devices of different manufacturers is noted.
  • Keywords
    germanium; semiconductor counters; semiconductor diodes; semiconductor junctions; Ge gold bonded diodes; anomalous second breakdown failure levels; hemispherical geometry; pulse injection tests;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1974.6499262
  • Filename
    6499262