DocumentCode
1533241
Title
Anomalous second breakdown failure levels in Germanium gold-bonded diodes
Author
Cohn, N.S. ; Petree, M.C.
Author_Institution
Naval Ordnance Lab., White Oak, Silver Spring, MD, USA
Volume
21
Issue
4
fYear
1974
Firstpage
20
Lastpage
22
Abstract
Pulse injection tests on germanium gold-bonded diodes showed that failure due to second breakdown may occur at lower power levels in the forward direction than in the reverse direction. The result is shown to be due to the hemispherical geometry of the junction and the associated spatial variation of the conductivity modulation. Variation between devices of different manufacturers is noted.
Keywords
germanium; semiconductor counters; semiconductor diodes; semiconductor junctions; Ge gold bonded diodes; anomalous second breakdown failure levels; hemispherical geometry; pulse injection tests;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1974.6499262
Filename
6499262
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