DocumentCode :
1533242
Title :
Doping and Illumination Dependence of 
Noise in Pentacene Thin-Film Transistors
Author :
Jia, Zhang ; Meric, Inanc ; Shepard, Kenneth L. ; Kymissis, Ioannis
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Volume :
31
Issue :
9
fYear :
2010
Firstpage :
1050
Lastpage :
1052
Abstract :
We characterize the influence of interfacial trap sites on carrier scattering and subsequent contribution to channel noise by taking 1/f noise measurements on pentacene organic field-effect transistors (OFETs). The noise dependence on drain current from OFETs with UV-ozone treated parylene gate dielectric before the deposition of the semiconductor is compared to that of otherwise identical OFETs with no air exposure during fabrication. Our studies indicate a different noise characteristic in the two samples, which is further confirmed by increasing the carrier density under illumination and comparing the noise spectrum for photogenerated charges with gate-field-induced carriers.
Keywords :
1/f noise; organic field effect transistors; semiconductor doping; thin film transistors; 1/f noise; carrier scattering; channel noise; doping; drain current; illumination dependence; parylene gate dielectric; pentacene organic field-effect transistors; pentacene thin-film transistors; Charge carrier density; Dielectrics; Doping; Fabrication; Lighting; Noise measurement; OFETs; Pentacene; Scattering; Semiconductor device noise; Charge carrier mobility; field-effect transistors (FETs); organic compounds; thin-film transistors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2052779
Filename :
5508348
Link To Document :
