DocumentCode
1533275
Title
A Low-Voltage Low-Power K-Band CMOS LNA Using DC-Current-Path Split Technology
Author
Wang, To-Po
Author_Institution
Dept. of Electron. Eng. & Grad., Nat. Taipei Univ. of Technol., Taipei, Taiwan
Volume
20
Issue
9
fYear
2010
Firstpage
519
Lastpage
521
Abstract
A low-voltage low-power K-band low-noise amplifier (LNA) using 0.18 μm CMOS technology is presented in this letter. By splitting the dc current paths, the supply voltage of the LNA is effectively reduced. Moreover, the forward-biased body is adopted for the LNA to boost the gain. Furthermore, the high-value resistors are utilized between nMOS bodies and forward-body biases (VB) to prevent the signal leakage and noise coupling. The proposed LNA achieved a 13.2 dB gain and 4.1 dB noise figure at 20.5 GHz. The supply voltage and total dc power consumption are 0.6 V and 7.1 mW, respectively. To the author´s knowledge, this LNA demonstrates the lowest supply voltage among previously published K-band 0.18 μm CMOS LNA.
Keywords
CMOS integrated circuits; low noise amplifiers; low-power electronics; resistors; frequency 20.5 GHz; gain 13.2 dB; noise figure 4.1 dB; power 7.1 mW; size 0.18 mum; voltage 0.6 V; CMOS technology; Current supplies; Energy consumption; Gain; K-band; Low-noise amplifiers; MOS devices; Noise figure; Resistors; Voltage; DC-current-path split;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2010.2052794
Filename
5508353
Link To Document