• DocumentCode
    1533275
  • Title

    A Low-Voltage Low-Power K-Band CMOS LNA Using DC-Current-Path Split Technology

  • Author

    Wang, To-Po

  • Author_Institution
    Dept. of Electron. Eng. & Grad., Nat. Taipei Univ. of Technol., Taipei, Taiwan
  • Volume
    20
  • Issue
    9
  • fYear
    2010
  • Firstpage
    519
  • Lastpage
    521
  • Abstract
    A low-voltage low-power K-band low-noise amplifier (LNA) using 0.18 μm CMOS technology is presented in this letter. By splitting the dc current paths, the supply voltage of the LNA is effectively reduced. Moreover, the forward-biased body is adopted for the LNA to boost the gain. Furthermore, the high-value resistors are utilized between nMOS bodies and forward-body biases (VB) to prevent the signal leakage and noise coupling. The proposed LNA achieved a 13.2 dB gain and 4.1 dB noise figure at 20.5 GHz. The supply voltage and total dc power consumption are 0.6 V and 7.1 mW, respectively. To the author´s knowledge, this LNA demonstrates the lowest supply voltage among previously published K-band 0.18 μm CMOS LNA.
  • Keywords
    CMOS integrated circuits; low noise amplifiers; low-power electronics; resistors; frequency 20.5 GHz; gain 13.2 dB; noise figure 4.1 dB; power 7.1 mW; size 0.18 mum; voltage 0.6 V; CMOS technology; Current supplies; Energy consumption; Gain; K-band; Low-noise amplifiers; MOS devices; Noise figure; Resistors; Voltage; DC-current-path split;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2010.2052794
  • Filename
    5508353