DocumentCode :
1533275
Title :
A Low-Voltage Low-Power K-Band CMOS LNA Using DC-Current-Path Split Technology
Author :
Wang, To-Po
Author_Institution :
Dept. of Electron. Eng. & Grad., Nat. Taipei Univ. of Technol., Taipei, Taiwan
Volume :
20
Issue :
9
fYear :
2010
Firstpage :
519
Lastpage :
521
Abstract :
A low-voltage low-power K-band low-noise amplifier (LNA) using 0.18 μm CMOS technology is presented in this letter. By splitting the dc current paths, the supply voltage of the LNA is effectively reduced. Moreover, the forward-biased body is adopted for the LNA to boost the gain. Furthermore, the high-value resistors are utilized between nMOS bodies and forward-body biases (VB) to prevent the signal leakage and noise coupling. The proposed LNA achieved a 13.2 dB gain and 4.1 dB noise figure at 20.5 GHz. The supply voltage and total dc power consumption are 0.6 V and 7.1 mW, respectively. To the author´s knowledge, this LNA demonstrates the lowest supply voltage among previously published K-band 0.18 μm CMOS LNA.
Keywords :
CMOS integrated circuits; low noise amplifiers; low-power electronics; resistors; frequency 20.5 GHz; gain 13.2 dB; noise figure 4.1 dB; power 7.1 mW; size 0.18 mum; voltage 0.6 V; CMOS technology; Current supplies; Energy consumption; Gain; K-band; Low-noise amplifiers; MOS devices; Noise figure; Resistors; Voltage; DC-current-path split;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2010.2052794
Filename :
5508353
Link To Document :
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