DocumentCode :
1533310
Title :
Statistical distribution of neutron semiconductor device degradation
Author :
McKenzie, J.M.
Author_Institution :
Sandia Labs., Albuquerque, NM, USA
Volume :
21
Issue :
5
fYear :
1974
Firstpage :
23
Lastpage :
27
Abstract :
The population of permanent neutron degradation of base current per unit neutron fluence is normally distributed. The standard deviation of the population is about 10% of the mean degradation. This information is used to estimate circuit failures after a neutron pulse.
Keywords :
neutron effects; semiconductor device testing; statistical analysis; circuit failures; neutron pulse; neutron semiconductor device degradation; standard deviation; statistical distribution;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1974.6499271
Filename :
6499271
Link To Document :
بازگشت