Spectral properties of angled-grating high-power semiconductor lasers

Author

Sarangan, Andrew M. ; Wright, Malcolm W. ; Marciante, John R. ; Bossert, David J.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

35

Issue

8

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

1220

Lastpage

1230

Abstract

We study the spectral properties of angled-grating high-power semiconductor lasers, also known as α distributed feedback (DFB) lasers. We have derived a closedform expression to describe the cavity resonance. The results of this model are shown to compare favorably with experimental data. Intrinsic device parameters such as coupling coefficient and grating period are shown to be correlated to spectral and nearfield characteristics. The formulations and insights developed in this paper allow one to calculate these critical design parameters for optimum performance

Keywords

diffraction gratings; distributed feedback lasers; laser cavity resonators; laser modes; semiconductor lasers; α DFB lasers; angled-grating high-power semiconductor lasers; cavity resonance; closedform expression; coupling coefficient; critical design parameters; grating period; intrinsic device parameters; nearfield characteristics; optimum performance; spectral characteristics; spectral properties; Distributed feedback devices; Gratings; Laboratories; Laser beams; Laser feedback; Laser modes; Power lasers; Resonance; Semiconductor lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.777224

Filename

777224