DocumentCode :
1533392
Title :
Spectral properties of angled-grating high-power semiconductor lasers
Author :
Sarangan, Andrew M. ; Wright, Malcolm W. ; Marciante, John R. ; Bossert, David J.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Volume :
35
Issue :
8
fYear :
1999
fDate :
8/1/1999 12:00:00 AM
Firstpage :
1220
Lastpage :
1230
Abstract :
We study the spectral properties of angled-grating high-power semiconductor lasers, also known as α distributed feedback (DFB) lasers. We have derived a closedform expression to describe the cavity resonance. The results of this model are shown to compare favorably with experimental data. Intrinsic device parameters such as coupling coefficient and grating period are shown to be correlated to spectral and nearfield characteristics. The formulations and insights developed in this paper allow one to calculate these critical design parameters for optimum performance
Keywords :
diffraction gratings; distributed feedback lasers; laser cavity resonators; laser modes; semiconductor lasers; α DFB lasers; angled-grating high-power semiconductor lasers; cavity resonance; closedform expression; coupling coefficient; critical design parameters; grating period; intrinsic device parameters; nearfield characteristics; optimum performance; spectral characteristics; spectral properties; Distributed feedback devices; Gratings; Laboratories; Laser beams; Laser feedback; Laser modes; Power lasers; Resonance; Semiconductor lasers; Waveguide lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.777224
Filename :
777224
Link To Document :
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