Linearity and third-order intermodulation distortion in DFB semiconductor lasers

Author

Chen, Jianyao ; Ram, Rajeev J. ; Helkey, Roger

Author_Institution

Res. Lab. of Electron., MIT, Cambridge, MA, USA

Volume

35

Issue

8

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

1231

Lastpage

1237

Abstract

This paper presents a systematic investigation of the third-order intermodulation distortion characteristics in distributed feedback (DFB) semiconductor lasers. The influence of several nonlinearities, such as longitudinal spatial hole burning, gain compression, and relaxation oscillation, is considered. Detailed analysis shows that it is possible to make different nonlinearities cancel one another to give a low intermodulation distortion by choosing the appropriate DFB structure and beat conditions. Specifically, conditions for cancellation between spatial hole burning and gain compression nonlinearities are introduced

Keywords

distributed feedback lasers; intermodulation distortion; laser theory; optical hole burning; semiconductor device models; semiconductor lasers; DFB semiconductor lasers; DFB structure; beat conditions; distributed feedback semiconductor lasers; gain compression; gain compression nonlinearities; linearity; longitudinal spatial hole burning; low intermodulation distortion; relaxation oscillation; spatial hole burning; third-order intermodulation distortion; Distributed feedback devices; Fiber lasers; Frequency; Intermodulation distortion; Laser feedback; Laser noise; Laser theory; Linearity; Semiconductor laser arrays; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.777225

Filename

777225