Title :
Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers
Author :
Deppe, Dennis G. ; Huffaker, D.L. ; Zou, Zhi-Xiang ; Park, Gi-Ho ; Shchekin, O.B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
fDate :
8/1/1999 12:00:00 AM
Abstract :
The spontaneous emission spectra and lasing characteristics of long-wavelength (1.3-μm) quantum-dot lasers are studied. It is found experimentally that nonradiative recombination can dominate the room-temperature efficiency and limit threshold, By describing the quantum-dot spectral emission as due to energy levels of a two-dimensional harmonic oscillator, rate equations are developed to account for the temperature-dependent spontaneous and lasing characteristics
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; semiconductor quantum dots; spontaneous emission; 1.3 mum; 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers; InGaAs-GaAs; lasing characteristic; long-wavelength; nonradiative recombination; quantum-dot spectral emission; rate equations; room-temperature efficiency; spontaneous emission; spontaneous emission spectra; temperature-dependent spontaneous emission characteristics; threshold characteristics; two-dimensional harmonic oscillator; Energy states; Equations; Indium gallium arsenide; Land surface temperature; Laser transitions; Oscillators; Quantum dots; Spontaneous emission; Temperature dependence; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
