• DocumentCode
    1533498
  • Title

    ACCNT: A Metallic-CNT-Tolerant Design Methodology for Carbon Nanotube VLSI: Analyses and Design Guidelines

  • Author

    Lin, Albert ; Zhang, Jie ; Patil, Nishant ; Wei, Hai ; Mitra, Subhasish ; Wong, H. S Philip

  • Author_Institution
    Stanford Univ., Stanford, CA, USA
  • Volume
    57
  • Issue
    9
  • fYear
    2010
  • Firstpage
    2284
  • Lastpage
    2295
  • Abstract
    We present analyses for ACCNT (pronounced as “accent”), which is a solution to the metallic-nanotube problem that does not require any metallic-nanotube removal of any kind. ACCNT uses asymmetrically correlated carbon nanotubes to achieve metallic-nanotube tolerance, delivering high ON-OFF ratios while preserving current drive. We analyze the ACCNT methodology in terms of its tradeoffs and explore optimizations that may serve as future design guidelines. We also investigate circuit-level considerations and the impact of density variation on the ACCNT design. We find that ACCNT can improve the yield of a one-million transistor chip from 0% (conventional CNT design) up to 99% at a cost of 3.3× area overhead if the fraction of semiconducting CNTs is improved to 99.9%.
  • Keywords
    VLSI; carbon nanotubes; integrated circuit design; ACCNT design; ACCNT methodology; carbon nanotube VLSI; circuit-level considerations; metallic-CNT-tolerant design methodology; metallic-nanotube tolerance; on-off ratios; Carbon nanotubes; Design methodology; FETs; Focusing; Guidelines; Integrated circuit technology; Joining processes; Robustness; Semiconductivity; Very large scale integration; Carbon nanotube field-effect transistor (CNFET); correlation; nanotechnology; optimization;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2010.2053207
  • Filename
    5508386